BUK455 DATASHEET PDF

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Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Accessories supplied. BUKA Powermos Transistor: 60v, 41a. N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in. Details, datasheet, quote on part number: BUKA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER BUK Drain-source voltage Drain current (DC).

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C Philips Electronics N. Typical turn-on gate-charge characteristics. August 6 Rev 1. Normalised continuous drain current. Preliminary specification Vatasheet data sheet contains preliminary data; supplementary data may be published later.

Preliminary specification This data sheet contains preliminary data; supplementary data datasheeg be published later. Stress above one or dstasheet of the limiting values may cause permanent damage to the device. Typical reverse diode current. Avalanche energy test circuit. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

Refer to mounting instructions for TO envelopes. This data sheet contains target or goal specifications for product development. Application information Where application information is given, it is advisory and does not form part of the specification.

Refer to mounting instructions for TO envelopes. New Product View Product Index. August 6 Rev 1.

BUK455-200A MOSFET. Datasheet pdf. Equivalent

Normalised avalanche energy rating. Measured from contact screw on tab to centre of die Measured from drain lead 6 mm from package to centre of die Measured from source lead 6 mm from package to source bond pad MIN. The information presented in this document does datqsheet form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. Normalised drain-source on-state resistance. TOAB; pin 2 connected to mounting base.

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These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Observe the general handling precautions for electrostatic-discharge sensitive devices ESDs to prevent damage to MOS gate oxide. Exposure to limiting values for extended periods may affect device reliability. Normalised avalanche guk455 rating.

Normalised drain-source on-state resistance. Normalised continuous drain current. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully datashet Philips for any damages resulting from such improper use or sale.

No liability will be accepted by the publisher for any consequence of its use. Typical reverse diode current. Typical capacitances, Ciss, Coss, Crss. Application information Where application information is given, it is advisory and does not form part of the specification.

Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. August 7 Rev 1. Datashdet the general handling precautions for electrostatic-discharge sensitive devices ESDs datasheett prevent damage to MOS gate oxide.

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August 7 Rev 1.

BUKA, BG-ELECTRONICS BUKA, BUK, BUK

Typical capacitances, Ciss, Coss, Crss. No liability will be accepted by the publisher for any consequence of its use. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.

UNIT – – 1. Product specification This data sheet contains final product specifications. VDD August 5 Rev 1. TOAB; pin 2 connected to mounting base. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice.

Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. Typical turn-on gate-charge characteristics. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied.

This data sheet contains final product specifications. Stress above one or more of the limiting values may cause permanent damage to the device. Avalanche energy test circuit. Exposure to limiting values for extended periods may affect device reliability.