The IR/IR are high voltage, high speed power. MOSFET and Please refer to our Application Notes and DesignTips for proper circuit board layout. APPLICATION NOTE. 1. GATE DRIVE REQUIREMENTS OF HIGH-SIDE DEVICES. The gate drive requirements for a power MOSFET or IGBT uti- lized as a high. Design and Application Guide of Bootstrap Circuit for. High-Voltage Gate-Drive IC. Rev. • 12/18/14 1. Introduction. The purpose of.
|Published (Last):||10 June 2013|
|PDF File Size:||20.39 Mb|
|ePub File Size:||15.64 Mb|
|Price:||Free* [*Free Regsitration Required]|
Try notee the other mosfet. Unfortunately, by looking at the suggested schematic see below I’m unable to understand what value should I be using for this. But you should test the circuit with a load, as in an SMPS, many unexpected things can happen if there is no load.
The capacitor size came out to be approximately 1uF. Maybe you can try to turn 1 mosfet gate off first. So you can troubleshoot the circuit somehow?
Yes, my password is: It will also provide accurate information about the principles behind quantum theory that helps quantum computing work. Jun 18, 5. That’s for the 20 kHz side presumably. For what its worth, by assuming that I can ignore capacitor leakage current and Vmin, I used the above expression and the values I found for a frequency of 50Hz. Post as a guest Name. For what its worth, by assuming that I can ignore capacitor leakage current and Vmin, I used the above expression and the values I found for a frequency of 50Hz.
All postings and use of the content on this site are subject to the Usage Terms of the site; third parties using this content agree to abide by any limitations or appliication and to comply with the Usage Terms of this site.
The value for 20kHz is 0. I just redid my calculation and the answer turns out to be the same. I am unable to understand what is happening and would want some pointers and help to fix this issue. Posted by Runs in forum: Am I correct that if I use a ceramic capacitor, this value would be value and therefore can be ignored in the above expression? If it does then cross conduction is highly likely. I cbs – leakBootstrap cap. Too high and some FETs will start to turn on only ones wity very low Vth.
Infineon accepts no liability for the content and materials on this site being accurate, complete or up- to-date or for the contents of external links. V Minthe application note states this is the minimum voltage between the Vb and Vs.
Is there a drawback to having a large bootstrap capacitor?
Then see if the other still gets hot. No, create an account now. Jul 2, Jun 18, 8.
Hello, What driver chip are you using? I just redid my calculation and the answer turns out to be the same. One question though – suppose I require a capacitor of 1uF. Jul 3, Sign up using Facebook.
You should add your circuitry and the error report of your simulation about overflow and convert error ir2131 your post. I cbs – leakBootstrap cap.
Thank you very much.
V Minthe application note states this is the minimum voltage between the Vb and Vs. Hope I could ir2113. I greatly appreciate any help.
I really don’t have time to go through all of this, but it sounds like you’re running into a cross-conduction problem due to insufficient “dead time”; and you’re running at nnote fairly high frequencies.
High voltage half Bridge mosfet problem.